Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP

Author

Mori, L. ; Hoffmann, Dieter ; Bornholdt, Carsten ; Mekonnen, G.G. ; Reier, F.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH

fYear

1999

fDate

1999

Firstpage

385

Lastpage

388

Abstract

We report on the design, fabrication and performance electro-optic switches based on a Mach-Zehnder interferometer with traveling wave electrodes. Our work aimed at increasing the bandwidth of such devices by reducing the loss parameter a of the electrodes. We realized an electrode configuration using electro-plated metallization layers and achieved a bandwidth of 50 GHz (6.4 dB electrical corresponding to 3 dB optical) suitable for the operation of optoelectronic devices up to 100 Gb/s

Keywords

III-V semiconductors; Mach-Zehnder interferometers; electro-optical switches; electrodes; electroplated coatings; indium compounds; semiconductor device metallisation; 100 Gbit/s; 50 GHz; InP; Mach-Zehnder interferometer; bandwidth; electro-optic switch; electroplated metallization; loss parameter; optoelectronic device; traveling wave electrode; Bandwidth; Electrodes; Frequency; High speed optical techniques; Indium phosphide; Optical interferometry; Optical refraction; Optical variables control; Optoelectronic devices; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773714

Filename

773714