A 2.0 μm cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells

Author

Dries, J. Christopher ; Gokhale, Milind R. ; Forrest, Stephen R. ; Olsen, Gregory H.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

fYear

1999

fDate

1999

Firstpage

397

Lastpage

400

Abstract

We report an avalanche photodiode structure for use at wavelengths as long as 2.1 μm. Light is absorbed in a 100 period structure consisting of In_0.83Ga_0.17As quantum wells strain-compensated by In_0.83Ga_0.17P barrier layers. Photogenerated electrons are injected into a high electric field In_0.52Al_0.48As (ionization rate ratio=0.2) gain region initiating low noise avalanche multiplication. Primary dark currents of ~5 nA and responsivities of 45 A/W at a wavelength of 1.93 μm are observed

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; quantum well devices; 2.0 micron; In_0.52Al_0.48As; InGaAs quantum well; SACM APD; avalanche multiplication; cutoff wavelength; dark current; ionization rate; period structure; photodetector; responsivity; separate absorption charge and multiplication layer avalanche photodiode; strain compensation; Absorption; Avalanche photodiodes; Capacitive sensors; Detectors; Electrons; Indium gallium arsenide; Indium phosphide; Optoelectronic and photonic sensors; Quantum well devices; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773717

Filename

773717