InP-based high speed digital logic gates using an RTD/HBT heterostructure

Author

Lin, C.-H. ; Yang, K. ; Gonzalez, A.F. ; East, J.R. ; Mazumder, P. ; Haddad, G.I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1999

fDate

1999

Firstpage

419

Lastpage

422

Abstract

In this paper we report on the design, fabrication, and measurement of InP-based high-speed monolithically integrated static inverter and consensus element. These logic gates were implemented using an MBE-grown stacked-layer epitaxial heterostructure of a resonant-tunneling-diode (RTD) and heterojunction-bipolar-transistor (HBT), the fabricated RTDs showed a peak-to-valley current ratio of 10 at room temperature and the HBT´s demonstrated a current gain of 68 and a cutoff frequency (f_T) of 50 GHz. The logic functions of these two fabricated circuits were confirmed up to 6 Gb/s

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated logic circuits; logic gates; resonant tunnelling diodes; semiconductor epitaxial layers; 50 GHz; 6 Gbit/s; InAlAs-InGaAs; InGaAs-AlAs; MBE-grown stacked-layer epitaxial heterostructure; RTD/HBT heterostructure; consensus element; current gain; cutoff frequency; high speed digital logic gates; logic functions; peak-to-valley current ratio; static inverter; Circuits; Cutoff frequency; Fabrication; Heterojunction bipolar transistors; Inverters; Logic functions; Logic gates; Molecular beam epitaxial growth; Resonant tunneling devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773722

Filename

773722