Title :
Emerging memory technologies
Author :
Kim, Kinam ; Jeong, Gitae ; Jeong, Hongsik ; Lee, Sungyung
Author_Institution :
Memory Div., Samsung Electron. Co., Ltd., Yongin
Abstract :
Ferroelectric RAM (FRAM) and phase-change RAM (PRAM) have been recently focused as candidates for ideal memory which can solve the problems of conventional memories. FRAM and PRAM have the properties of nonvolatility and fast write speed, which are considered as key properties for high performance mobile application and embedded solution. The process technologies for the integration of high performance/high density emerging memories (FRAM and PRAM) is reviewed
Keywords :
ferroelectric storage; random-access storage; embedded systems; fast write speed; ferroelectric RAM; nonvolatile memories; phase-change RAM; Costs; Energy consumption; Ferroelectric films; Low voltage; Nonvolatile memory; Phase change random access memory; Polarization; Random access memory; Scalability; Semiconductor memory;
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9023-7
DOI :
10.1109/CICC.2005.1568696
