DocumentCode
2908679
Title
Emerging memory technologies
Author
Kim, Kinam ; Jeong, Gitae ; Jeong, Hongsik ; Lee, Sungyung
Author_Institution
Memory Div., Samsung Electron. Co., Ltd., Yongin
fYear
2005
fDate
21-21 Sept. 2005
Firstpage
423
Lastpage
426
Abstract
Ferroelectric RAM (FRAM) and phase-change RAM (PRAM) have been recently focused as candidates for ideal memory which can solve the problems of conventional memories. FRAM and PRAM have the properties of nonvolatility and fast write speed, which are considered as key properties for high performance mobile application and embedded solution. The process technologies for the integration of high performance/high density emerging memories (FRAM and PRAM) is reviewed
Keywords
ferroelectric storage; random-access storage; embedded systems; fast write speed; ferroelectric RAM; nonvolatile memories; phase-change RAM; Costs; Energy consumption; Ferroelectric films; Low voltage; Nonvolatile memory; Phase change random access memory; Polarization; Random access memory; Scalability; Semiconductor memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9023-7
Type
conf
DOI
10.1109/CICC.2005.1568696
Filename
1568696
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