Title :
LP-MOVPE grown GaAs- and InP-based HBTs using all-liquid alternative sources
Author :
Veiling, P. ; Agethen, M. ; Herenda, E. ; Prost, W. ; Stolz, W. ; Tegude, F.J.
Author_Institution :
Dept. of Solid State Electron., Gerhard-Mercator Univ. GH Duisburg, Germany
Abstract :
The liquid alternative group-V precursors TBAs/TBP and CBr4 /DitBuSi as group-IV dopant sources are used to grow GaAs- and InP-based HBT layer stacks. The LP-MOVPE growth of III-V semiconductors using all-liquid sources exhibit a reduced hazard potential and allow a reduced growth temperature which fits to the needs of carbon doping in HBT layer stacks. State-of-the-art InGaP/GaAs HBTs are grown at constant growth temperature (Tgt=60°C) and nearly constant V/III-ratio (10<V/III<15) enabling a simplified MOVPE process control. The process control for InGaAs/InP-HBTs is also simplified compared to the use of standard precursors. The InP-HBT structures are grown in between 500°C<Tpr<600°C temperature and 5<V/III<30 V/III-ratio range
Keywords :
MOCVD; gallium arsenide; heterojunction bipolar transistors; indium compounds; process control; semiconductor growth; vapour phase epitaxial growth; 500 to 600 degC; CBr4/DitBuSi; GaAs; GaAs-based HBTs; HBT layer stacks; III-V semiconductors; InGaAs; InGaP; InP; InP-based HBTs; LP-MOVPE; MOVPE process control; TBAs/TBP; all-liquid alternative sources; carbon doping; constant growth temperature; group-IV dopant sources; group-V precursors; growth temperature; hazard potential; nearly constant V/III-ratio; Epitaxial growth; Epitaxial layers; Gallium arsenide; Hazards; Heterojunction bipolar transistors; III-V semiconductor materials; Indium gallium arsenide; Process control; Semiconductor device doping; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773734
