Title :
A new concept for InP-HBT fabrication process
Author :
Le Pallec, M. ; Bauknecht, R. ; Bitter, M. ; Melchior, H.
Author_Institution :
Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
A new technology for submicron InP HBT-based integrated circuit fabrication has been investigated. The new concept takes advantage of the crystal plane dependency of InP and InGaAs wet chemical etching profiles combined with an optimized planarization technique. High-speed transistors with a simplified processing in a reduced fabrication time are obtained for the InP-HBT technology
Keywords :
III-V semiconductors; bipolar integrated circuits; etching; heterojunction bipolar transistors; indium compounds; integrated circuit technology; surface treatment; InP; InP-HBT fabrication process; crystal plane dependency; high-speed transistors; integrated circuit fabrication; optimized planarization technique; reduced fabrication time; wet chemical etching profiles; Bipolar transistors; Chemical technology; DH-HEMTs; Indium gallium arsenide; Indium phosphide; Integrated circuit technology; Metallization; Optical device fabrication; Planarization; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773735
