A new GaInP/GaAs high-barrier gate and tri-step doped channel transistor

Author

Liu, W.C. ; Chang, W.L. ; Shie, Y.H. ; Pan, H.J. ; Wang, W.C. ; Chen, J.Y. ; Thei, K.B. ; Yu, K.H. ; Feng, S.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1999

fDate

1999

Firstpage

479

Lastpage

482

Abstract

A high-barrier gate GaInP/GaAs doped channel field-effect transistor (DCFET) has been fabricated and studied. The δ(P⁺)GaInP layer is employed to offer a high conduction band offset for a good electron confinement and achieve a high valance band offset as a hole barrier. The active channel is triple-step doped to obtain high-barrier camel gate. A fabricated n⁺-GaAs/δ(P⁺)GaInP/n-GaAs camel diode exhibits a barrier height larger than 1.2 eV and a very high breakdown voltage of 33 V. The measured transconductance is 140 mS/mm with a unity current gain frequency of 17 GHz for a 1×50 μm² device

Keywords

III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; semiconductor device breakdown; valence bands; 17 GHz; 33 V; GaInP-GaAs; GaInP/GaAs doped channel field-effect transistor; GaInP/GaAs high-barrier gate; breakdown voltage; electron confinement; high conduction band offset; high valance band offset; high-barrier camel gate; hole barrier; n⁺-GaAs/δ(P⁺)GaInP/n-GaAs camel diode; transconductance; triple-step doped active channel; unity current gain frequency; Buffer layers; FETs; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Schottky diodes; Semiconductor diodes; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773737

Filename

773737