InP HBT self-aligned technology for 40 Gbit/s ICs: fabrication and CAD geometric model

Author

Blayac, S. ; Riet, M. ; Benchimol, J.L. ; Abboun, M. ; Aniel, F. ; Berdaguer, P. ; Duchenois, A.M. ; Konczykowska, A. ; Godin, J.

Author_Institution

Groupement d´´Interet Econ., OPTO+, Marcoussis, France

fYear

1999

fDate

1999

Firstpage

483

Lastpage

486

Abstract

InP/InGaAs DHBT technology for 40 Gb/s ICs is first presented. For these circuit applications, a sufficient breakdown voltage (>5 V), a static gain around 50, cutoff frequencies (f_T) and maximum oscillation frequencies (f_max) greater than 100 GHz are needed. High performance InP/InGaAs DHBT grown by chemical beam epitaxy (CBE) are reported with 125 GHz f_T, 128 GHz f_max and a gain of 50 at a current density of 1×10⁵ A/cm². Devices geometry optimisation is performed using a geometric model based on a set of analytical equations. This tool allows not only technological optimisation but also function-adapted individual sizing of the devices in the circuits

Keywords

III-V semiconductors; bipolar MIMIC; circuit CAD; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; semiconductor device models; very high speed integrated circuits; 125 GHz; 128 GHz; 40 Gbit/s; CAD geometric model; CBE; ICs; InP HBT; InP-InGaAs; InP/InGaAs DHBT technology; analytical equations; breakdown voltage; chemical beam epitaxy; circuit applications; current density; cutoff frequencies; devices geometry optimisation; fabrication; function-adapted individual sizing; gain; geometric model; maximum oscillation frequencies; self-aligned technology; static gain; technological optimisation; Chemicals; Circuits; Cutoff frequency; DH-HEMTs; Epitaxial growth; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773738

Filename

773738