DocumentCode :
2908966
Title :
Subnano-scale selective etching and nano-scale pore array formation on inp [001] surfaces by a wet electrochemical process
Author :
Hamamatsu, Akihito ; Kaneshiro, Chinami ; Sato, Taketomo ; Fujikura, Hajime ; Hasegawa, Hideki
Author_Institution :
Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan
fYear :
1999
fDate :
16-20 May 1999
Firstpage :
503
Lastpage :
506
Abstract :
Applicability of the wet electrochemical process to selective etching and nano-pore formation on n-InP (001) surfaces were investigated. The d.c. photo-anodic etching and the pulsed-avalanche etching in a IM HCl solution were found to be highly controllable and produce uniform and clean surfaces. In particular, the pulsed avalanche etching realized an extremely high etch depth controllability of 3×10-5 nm/pulse. On the other hand, ⟨001⟩-oriented nanometer-sized straight pore arrays were successfully formed by the photo-anodization. The pore arrays exhibited intense and red-shifted PL emissions, which were probably due to a set of well defined surface states formed on the pore walls
Keywords :
III-V semiconductors; anodisation; electrochemistry; etching; indium compounds; photoelectrochemistry; photoluminescence; porous materials; red shift; surface states; <001>-oriented nanometer-sized straight pore arrays; DC photo-anodic etching; InP; extremely high etch depth controllability; nano-scale pore array formation; photo-anodization; pore walls; pulsed-avalanche etching; red-shifted PL emissions; subnano-scale selective etching; well defined surface states; wet electrochemical process; Controllability; Electrochemical processes; Electrodes; Human computer interaction; Indium phosphide; Lamps; Substrates; Surface cleaning; Tungsten; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos, Switzerland
ISSN :
1092-8669
Print_ISBN :
0-7803-5562-8
Type :
conf
DOI :
10.1109/ICIPRM.1999.773743
Filename :
773743
Link To Document :
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