Title :
Quantum confined Stark effects of heavy hole subbands in In0.53Ga0.47As/In0.52Al0.48 As multi-quantum well structures using photocurrent spectroscopy
Author :
Tanaka, Kiyoshi ; Kurata, T. ; Kotera, N.
Author_Institution :
Dept. of Comput. Sci. & Electron., Kyushu Univ., Fukuoka
Abstract :
Infrared photocurrent spectra in In0.53Ga0.47As/In0.52Al0.48 As multiquantum wells were measured at room temperature under an external electric field. The interband photocurrent spectra showed a number of clear steplike structures due to two-dimensional subbands accentuated by free exciton states, in 10-nm-thick InGaAs quantum wells (QWs) separated by 10-nm-thick barriers. Energies of the confined states in QWs near zero field were extrapolated from higher field and shown to be proportional to the squared quantum numbers of heavy hole (HH) subbands and conduction subbands. Contribution of light hole (LH) was discriminate by a separate experiment under a tilted polarized light. The HH-related peaks were most sensitive to the bias field because the quantum confined Stark effect (QCSE) was stronger in HH subbands. Model calculation precisely revealed that an allowed LH transition could change into a forbidden HH transition by an electric field. Nonparabolicity of HH mass normal to the QW plane was surmised small
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; indium compounds; interface states; light polarisation; photoconductivity; quantum confined Stark effect; semiconductor quantum wells; In0.52Al0.48As; In0.53Ga0.47As; In0.53Ga0.47As/In0.52Al0.48 As multi-quantum well structures; bias field; conduction subbands; confined states; external electric field; free exciton states; heavy hole subbands; infrared photocurrent spectra; interband photocurrent spectra; light hole; photocurrent spectroscopy; quantum confined Stark effects; room temperature; tilted polarized light; two-dimensional subbands; Excitons; Indium compounds; Indium phosphide; Photoconductivity; Photonic band gap; Potential well; Quantum well devices; Substrates; Temperature measurement; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773745