• DocumentCode
    2909011
  • Title

    Correlation between morphology and island formation on InP surfaces

  • Author

    Carlstrom, C.F. ; Anand, S. ; Niemi, E. ; Landgren, G.

  • Author_Institution
    Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    519
  • Lastpage
    521
  • Abstract
    The influence of the surface morphology on island formation by As/P exchange reaction on the InP surfaces was investigated. It was demonstrated that island formation is extremely sensitive to the physical nature of the surface. Variation in the surface rms. roughness, caused by controlled ion beam etching (shallow) under different conditions, was shown to drastically affect the island size distribution. Further, the determined total island volume increased with the surface roughness, which is consistent with increased surface area available for As/P exchange reaction. Modification of surface morphology is suggested as an alternative route to vary island size distribution
  • Keywords
    III-V semiconductors; indium compounds; island structure; rough surfaces; sputter etching; surface chemistry; surface topography; As/P exchange reaction; InP; InP surfaces; controlled ion beam etching; island formation; island size distribution; surface morphology; surface roughness; total island volume; Annealing; Indium phosphide; Ion beams; Rough surfaces; Size control; Sputter etching; Substrates; Surface morphology; Surface roughness; Surface topography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
  • Conference_Location
    Davos
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-5562-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1999.773747
  • Filename
    773747