DocumentCode
2909011
Title
Correlation between morphology and island formation on InP surfaces
Author
Carlstrom, C.F. ; Anand, S. ; Niemi, E. ; Landgren, G.
Author_Institution
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
fYear
1999
fDate
1999
Firstpage
519
Lastpage
521
Abstract
The influence of the surface morphology on island formation by As/P exchange reaction on the InP surfaces was investigated. It was demonstrated that island formation is extremely sensitive to the physical nature of the surface. Variation in the surface rms. roughness, caused by controlled ion beam etching (shallow) under different conditions, was shown to drastically affect the island size distribution. Further, the determined total island volume increased with the surface roughness, which is consistent with increased surface area available for As/P exchange reaction. Modification of surface morphology is suggested as an alternative route to vary island size distribution
Keywords
III-V semiconductors; indium compounds; island structure; rough surfaces; sputter etching; surface chemistry; surface topography; As/P exchange reaction; InP; InP surfaces; controlled ion beam etching; island formation; island size distribution; surface morphology; surface roughness; total island volume; Annealing; Indium phosphide; Ion beams; Rough surfaces; Size control; Sputter etching; Substrates; Surface morphology; Surface roughness; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773747
Filename
773747
Link To Document