• DocumentCode
    2909025
  • Title

    Imaging studies of strained InGaAsP/InP heterostructures by photoluminescence microscopy

  • Author

    Bernussi, A.A. ; Carvalho, W., Jr. ; Furtado, M.T. ; Gobbi, A.L. ; Cotta, M.A.

  • Author_Institution
    Lab. de Optoelectron., CPqD/ABTLuS, Sao Paulo, Brazil
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    523
  • Lastpage
    526
  • Abstract
    Strained In1-xGaxAsyP1-y /InP single quantum wells grown by low-pressure metal-organic vapor phase epitaxy were investigated by photoluminescence microscopy imaging (PLM), photoluminescence spectroscopy, X-ray diffraction and atomic force microscopy techniques. PLM images of strained structures revealed the presence of a large number of non-radiative centers (dark spots). The dark spot density was dependent on tensile strain magnitude, barrier material and cap layer thickness. PLM images of highly tensile and compressive strained quaternary layers grown with the same structure exhibited quite different relaxation mechanisms
  • Keywords
    III-V semiconductors; X-ray diffraction; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; internal stresses; nonradiative transitions; photoluminescence; semiconductor quantum wells; InP; X-ray diffraction; atomic force microscopy; barrier material; cap layer thickness; dark spot density; imaging studies; low-pressure metal-organic vapor phase epitaxy; nonradiative centers; photoluminescence microscopy; photoluminescence microscopy imaging; photoluminescence spectroscopy; quaternary layers; relaxation mechanisms; strained In1-xGaxAsyP1-y /InP single quantum wells; strained InGaAsP/InP heterostructures; tensile strain magnitude; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Indium phosphide; Optical imaging; Photoluminescence; Spectroscopy; Tensile strain; X-ray diffraction; X-ray imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
  • Conference_Location
    Davos
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-5562-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1999.773748
  • Filename
    773748