Title :
Growth of high quality InGaP and related heterostructures by gas-source molecular beam epitaxy using tertiarybutylphosphine
Author :
Hirama, Atsushi ; Sai, Hironobu ; Fujikura, Hajime ; Hasegawa, Hideki
Author_Institution :
Graduate Sch. of Electron. & Inf. Eng., Hokkaido Univ., Sapporo, Japan
Abstract :
By carefully optimizing growth conditions based on RHEED, AFM, PL and Hall measurements, high-quality InGaP layers were successfully grown by gas source molecular beam epitaxy (GSMBE) using tertiarybutylphosphine (TBP) for the first time. The InGaP layers grown under the optimum condition showed a narrow and intense PL band-edge emission at low temperature as well as high electron mobility of 3300 cm 2/Vs at 300 K. InGaP/GaAs/InGaP quantum wells (QWs) were also formed. The quality of the bottom interface of the QW strongly depended on the growth sequence. Under the optimum sequence, QWs showed intense and narrow PL peaks, whereas the unoptimized sequence led to interface-related PL emissions and poor PL properties
Keywords :
Hall effect; III-V semiconductors; atomic force microscopy; chemical beam epitaxial growth; electron mobility; gallium compounds; indium compounds; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; 300 K; AFM; GSMBE; Hall measurements; InGaP/GaAs/InGaP quantum wells; InP; PL band-edge emission; RHEED; TBP; bottom interface; gas-source molecular beam epitaxy; growth sequence; heterostructures; high electron mobility; high quality InGaP; interface-related PL emissions; low temperature; optimizing growth conditions; tertiarybutylphosphine; Atomic force microscopy; Atomic measurements; Electrons; Epitaxial growth; Force measurement; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773754
