DocumentCode
2909174
Title
Dynamic properties of InGaAs quantum dot lasers
Author
Mao, M.-H. ; Heinrichsdorff, F. ; Bimberg, D.
Author_Institution
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
fYear
1999
fDate
1999
Firstpage
569
Lastpage
572
Abstract
Frequency chirping and linewidth enhancement factor are investigated for the first time in quantum dot lasers at room temperature. The time-resolved electroluminescence measurement shows a small chirp of 0.007 Å/mA. The linewidth enhancement factor a is determined to be 2.7 at lasing wavelength due to the asymmetry of gain spectrum caused by excited states
Keywords
III-V semiconductors; chirp modulation; electroluminescence; excited states; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; spectral line breadth; time resolved spectra; InGaAs; dynamic properties; excited states; frequency chirping; gain spectrum asymmetry; lasing wavelength; linewidth enhancement factor; quantum dot lasers; room temperature; time-resolved electroluminescence measurement; Chirp modulation; Electroluminescence; Frequency; Indium gallium arsenide; Laser modes; Pulse modulation; Quantum dot lasers; Semiconductor lasers; Temperature; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773759
Filename
773759
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