Title :
A wideband 77GHz, 17.5dBm power amplifier in silicon
Author :
Komijani, Abbas ; Hajimiri, Ali
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A 77GHz, +17.5dBm fully-integrated power amplifier (PA) with 50Ω input and output matching is fabricated in a 0.12μm SiGe BiCMOS process. The power amplifier achieves a peak power gain of 17dB and a maximum single-ended output power of +17.5dBm with 12.8% of power-added efficiency (PAE). It has a 3dB bandwidth of 15GHz and draws 165mA from a 1.8V supply. Microstrip tubs are used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in a small area of 0.6mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; millimetre wave power amplifiers; silicon; wideband amplifiers; 0.12 micron; 1.8 V; 15 GHz; 165 mA; 17 dB; 50 ohm; 77 GHz; SiGe; SiGe BiCMOS process; input matching; microstrip tubs; output matching; peak power gain; power amplifier; power-added efficiency; single-ended output power; transmission line structure; wideband amplifier; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Germanium silicon alloys; Impedance matching; Microstrip; Power amplifiers; Power generation; Power transmission lines; Silicon germanium;
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Print_ISBN :
0-7803-9023-7
DOI :
10.1109/CICC.2005.1568732
