High reflectivity laser facets by deeply etched DBR buried with benzocyclobutene

Author

Raj, Mothi Madhan ; Wiedmann, Joerg ; Saka, Yoshikazu ; Yasumoto, Hideo ; Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1999

fDate

1999

Firstpage

10

Abstract

Lasers having a DBR facet on one side of the cavity were fabricated in a simple process using one step electron beam (EB) lithography and CH₄/H₂-reactive ion etching (RIE). The DBR structure consists of deeply etched 3λ/4 wide grooves, which are buried with benzocyclobutene (BCB) polymer so as to reduce diffraction loss, spaced 3h/4 apart. The reflectivity of the DBR was estimated from the threshold current dependence on cavity length and an output power ratio from the front to the rear facets to be as high as 96% for 10 element DBR

Keywords

distributed Bragg reflector lasers; electron beam lithography; laser cavity resonators; refractive index; semiconductor lasers; sputter etching; benzocyclobutene; cavity length; deeply etched DBR; diffraction loss; high reflectivity laser facets; one step electron beam lithography; output power ratio; reactive ion etching; threshold current dependence; Distributed Bragg reflectors; Etching; Gold; Lithography; Mirrors; Polymers; Reflectivity; Semiconductor lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773767

Filename

773767