• DocumentCode
    2909324
  • Title

    Observation of flexural modes in FBAR resonators at MHz frequencies

  • Author

    Larson, John D., III ; Ruby, Richard C. ; Telschow, Ken L.

  • Author_Institution
    Electron. Res. Labs., Agilent Labs., Palo Alto, CA, USA
  • Volume
    1
  • fYear
    2003
  • fDate
    5-8 Oct. 2003
  • Firstpage
    88
  • Abstract
    Agilent GHz FBAR resonators are fabricated as suspended membranes of piezoelectric AlN. These vibrate as plate mode resonators in a symmetric or Sm,n type mode, with the resonant frequencies controlled by the thickness of the membrane, ∼1 micron for GHz frequencies. There also exists a class of anti-symmetric or Am,n type flexural plate modes. Resonators operating in this mode exhibit frequencies controlled by both the lateral dimensions and the residual stress in the plate. Unlike the symmetric modes, the Am,n modes are much harder to excite by the symmetric FBAR structure, are not easily observed at the electrical port, and occur in the MHz range for structures with lateral dimensions ∼100 microns. The imaging acoustic interferometer is a technique to visualize GHz rate vibrations in FBAR resonators, at sub-nanometer displacements. This paper describes an extension of that technique, which allows MHz rate Am,n mode vibrations to be visualized. The first few flexural modes were observed, and will be presented as images made while operating at their respective resonant frequencies. Such modes exhibit a rich structure of nodes and phase reversals of the vertical motion. Over 21 modes were observed in the range 0.5 to 15 MHz. The Q is observed to be ∼100. The flexural modes can be analyzed with a combined plate/drumhead theory, and the resonant frequencies fm,n are found to depend on the material properties, static film stress, and the lateral dimensions. This theory yields a regression fit to the data with a goodness of fit coefficient r2>0.95.
  • Keywords
    III-V semiconductors; acoustic wave interferometry; aluminium compounds; bulk acoustic wave devices; crystal resonators; internal stresses; piezoelectric semiconductors; vibrations; wide band gap semiconductors; 0.5 to 15 MHz; 1 micron; Agilent GHz film bulk acoustic wave resonator; AlN; electrical port; flexural modes; imaging acoustic interferometer; piezoelectric AlN; plate mode resonator vibrations; plate-drumhead theory; residual stress; resonant frequencies; static film stress; suspended membranes; symmetric mode; vertical motion phase reversals; Biomembranes; Drives; Film bulk acoustic resonators; Laboratories; Laser modes; Lasers and electrooptics; Probes; Resonant frequency; Stress; Visualization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics, 2003 IEEE Symposium on
  • Print_ISBN
    0-7803-7922-5
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2003.1293362
  • Filename
    1293362