Title :
A novel global interconnect method using nonlinear transmission lines
Author :
Kim, Jinsook ; Ni, Weiping ; Kan, Edwin C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
We propose the nonlinear transmission line (NLTL) as an effective global interconnect method that offers capabilities of rise/fall edge sharpening, signal shaping/amplification, and impedance matching. Interconnect line characteristics of NLTLs implemented with the MIT Lincoln Lab 0.18μm FDSOI (fully-depleted silicon-on-insulator) CMOS process are investigated up to 35GHz using S-parameters. The excellent return and insertion loss properties in a broadband illustrate the advantage of the NLTL interconnect. NLTL also provides a convenient way to tune the transmission-line characteristic impedance at microwave frequencies.
Keywords :
CMOS integrated circuits; S-parameters; impedance matching; integrated circuit interconnections; nonlinear network analysis; silicon-on-insulator; transmission line theory; 0.18 micron; CMOS process; FDSOI; S-parameters; fully-depleted silicon-on-insulator; global interconnect method; impedance matching; insertion loss properties; microwave frequencies; nonlinear transmission lines; rise/fall edge sharpening; signal amplification; signal shaping; transmission-line characteristic impedance; CMOS process; Capacitance; Capacitors; Frequency; Impedance; Integrated circuit interconnections; Power transmission lines; Transmission lines; Varactors; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Print_ISBN :
0-7803-9023-7
DOI :
10.1109/CICC.2005.1568743