Radiation hardened Flip-Flop design for super and sub threshold voltage operation

Author

Chavan, Ameet ; MacDonald, Eric ; Neff, Joseph ; Bozeman, Eric

Author_Institution

ECE Dept., Univ. of Texas at El Paso, El Paso, TX, USA

fYear

2011

fDate

5-12 March 2011

Firstpage

1

Lastpage

6

Abstract

A novel energy efficient, Single Event Upset (SEU)/Single Event Transient (SET) tolerant Flip-Flop (FF) design is proposed which is suitable for ultra-low power systems that operate between sub-threshold (250mV) and super-threshold (1.0V) supply voltages. In comparison to an existing sense-amplifier based radhard FF, the proposed FF provides equivalent SEU/SET resilience at super-threshold voltage (1.0V) while reducing power consumption by 40%. For sub-threshold operation at 250mV, the proposed FF is approximately five times more robust to external injected charge as compared to the sense-amplifier based FF and shows improved energy-delay product over a wide range of sub-threshold voltage operation (250mV - 500mV). The proposed FF is designed and simulated with 45nm IBM12SOI fully-depleted models.

Keywords

amplifiers; flip-flops; low-power electronics; energy-delay product; power consumption; radhard FF; radiation hardened flip-flop design; sense-amplifier; sense-amplifier based FF; single event transient flip-flop design; single event upset tolerant flip-flop design; subthreshold voltage operation; superthreshold voltage operation; ultralow power systems; voltage 250 mV to 1 V; Clocks; Delay; Latches; Radiation hardening; Single event upset; Threshold voltage; Flip-flop; Radhard; SET; SEU; Ultra low; sub-threshold;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace Conference, 2011 IEEE

Conference_Location

Big Sky, MT

ISSN

1095-323X

Print_ISBN

978-1-4244-7350-2

Type

conf

DOI

10.1109/AERO.2011.5747457

Filename

5747457