An ultra-low-power, temperature compensated voltage reference generator

Author

De Vita, Giuseppe ; Iannaccone, Giuseppe

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Univ. degli Studi di Pisa

fYear

2005

fDate

21-21 Sept. 2005

Firstpage

751

Lastpage

754

Abstract

A CMOS voltage reference, based on the difference between the gate-source voltages of two NMOS transistors, has been realized with AMS 0.35 mum CMOS technology (V_thn equiv 0.45 V and V_thn 0.75 V at 0 degC). The minimum and maximum supply voltages are 1.5 V and 4.3 V, respectively. The supply current at the maximum supply voltage and at 80 degC is 2.4 pA. A temperature coefficient of 25 ppm/degC and a line sensitivity of 1.6 mV/V are achieved. The power supply rejection ratios without any filtering capacitor at 100 Hz and 10 MHz are larger than -74 and -59 dB, respectively. The occupied chip area is 0.08 mm²

Keywords

CMOS integrated circuits; low-power electronics; reference circuits; 0 C; 0.35 micron; 0.45 V; 0.75 V; 1.5 V; 10 MHz; 100 Hz; 2.4 pA; 4.5 V; 80 C; AMS; CMOS voltage reference; NMOS transistor; filtering capacitor; gate-source voltage; line sensitivity; power supply rejection; temperature compensated voltage reference generator; ultra-low-power; Batteries; CMOS technology; Circuits; Current supplies; Low voltage; MOS devices; MOSFETs; Temperature dependence; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9023-7

Type

conf

DOI

10.1109/CICC.2005.1568777

Filename

1568777