Title :
A 3–5 GHz ultra wideband common-gate low noise amplifier
Author :
Zokaei, Abolfazl ; Boroujeni, M.A. ; Razaghian, Farhad ; Alvankarian, Jafar ; Dousti, Massoud
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ. South Tehran Branch, Tehran, Iran
Abstract :
In this paper, designing an ultra wideband 3-5 GHz CG LNA in two different styles with active and passive output matching using 0.18 μm CMOS process is presented. A wider bandwidth and reduced linearity is observed in active output whereas in passive mode a better performance of linearity but reduced bandwidth is achieved. As the circuitry in active mode to increase linearity and having a more excess transistor, dissipation is more in comparison with passive one. Using a shunt-series broadening technique at the output of the main stage has a roll of optimization of gain and controlling the bandwidth. By using a 1.8 v power supply a power gain of more than 10.5 dB, input reverse isolation less than -10.3 dB noise figure of about 4 dB and IIP3 in center frequency of 4 GHz about -4.4 dBm which dissipates less than 12 mw in active mode in 3-5.5 GHz frequency band is observed. In passive output mode with reduced dissipation, using 1.2 v power supply a power gain of more than 10 dB, input reverse isolation less than -10 dB, noise figure of about 4 dB and IIP3 in center frequency of 4 GHz about -2.5 dBm with dissipation of less than 6mw in 3-5 GHz frequency band is attained.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; passive networks; transistor circuits; ultra wideband technology; CMOS process; IIP3; active mode circuitry; active output matching; frequency 3 GHz to 5.5 GHz; frequency 4 GHz; linearity; passive mode; passive output matching; passive output mode; power gain; reverse isolation; shunt-series broadening technique; size 0.18 mum; transistor; ultra wideband CG LNA; ultra wideband common-gate low noise amplifier; voltage 1.2 V; voltage 1.8 V; Bandwidth; Gain; Impedance; Impedance matching; Linearity; Noise; Ultra wideband technology; Input Reverse Isolation; Power Gain; Shunt-series; Transconductance; Ultra wideband;
Conference_Titel :
Circuits and Systems (ICCAS), 2012 IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-3117-3
Electronic_ISBN :
978-1-4673-3118-0
DOI :
10.1109/ICCircuitsAndSystems.2012.6408274