Design of GaAs HBT Power Amplifier for WCDMA Wireless Communication Systems

Author

Alam, M.S. ; Armstrong, G.A.

Author_Institution

A.M.U., Aligarh

fYear

2007

fDate

26-28 Sept. 2007

Firstpage

596

Lastpage

599

Abstract

The power amplifier (PA) used in wide-band code-division multiple-access (WCDMA) needs to perform better from point of view linearity and efficiency. In the PA circuit harmonic traps and RC feedback arrangement are provided for improvement of linearity and stability. The power amplifier at collector voltage V_c of 3.4 V under WCDMA excitation shows an excellent linearity (first ACPR<-33dBc) and more than 35% of power-added efficiency (PAE) at 28 dBm of rated output power. All the WCDMA wireless PA specifications like PAE and adjacent channel power rejection (ACPR) as specified in the Third-Generation Partnership Project (3GPP) have been met even at extreme temperature conditions.

Keywords

III-V semiconductors; RC circuits; UHF integrated circuits; UHF power amplifiers; bipolar analogue integrated circuits; code division multiple access; gallium arsenide; heterojunction bipolar transistors; integrated circuit design; radiocommunication; GaAs; HBT power amplifier design; PAE; Third-Generation Partnership Project; WCDMA excitation; WCDMA wireless communication systems; adjacent channel power rejection; arrangement; extreme temperature conditions; harmonic traps; linearity parameters; power-added efficiency; stability parameters; voltage 3.4 V; wide-band code-division multiple-access; Broadband amplifiers; Circuit stability; Feedback circuits; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Multiaccess communication; Power amplifiers; Voltage; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits, 2007. ISIC '07. International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-0797-2

Electronic_ISBN

978-1-4244-0797-2

Type

conf

DOI

10.1109/ISICIR.2007.4441932

Filename

4441932