DocumentCode
2911164
Title
GaN HFET technology for RF applications
Author
Nguyen, C. ; Micovic, M. ; Wong, D. ; Kurdoghlian, A. ; Hashimoto, P. ; Janke, P. ; McCray, L. ; Jeong Moon
Author_Institution
HRL Labs., Malibu, CA, USA
fYear
2000
fDate
5-8 Nov. 2000
Firstpage
11
Lastpage
14
Abstract
GaN HFET has emerged as a very promising device technology for next-generation microwave applications. The last several years have witnessed a tremendous progress in the development of this technology, from material growth to circuit demonstration. Devices and circuits with excellent output power, power density, efficiency, and noise figure have been achieved. This talk reviews the current status of GaN HFET technology.
Keywords
III-V semiconductors; gallium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; wide band gap semiconductors; GaN; GaN HFET; RF technology; efficiency; microwave technology; noise figure; output power; power density; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; Microwave FETs; Microwave devices; Microwave technology; Noise robustness; Radio frequency; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location
Seattle, WA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5968-2
Type
conf
DOI
10.1109/GAAS.2000.906263
Filename
906263
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