Title :
GaN HFET technology for RF applications
Author :
Nguyen, C. ; Micovic, M. ; Wong, D. ; Kurdoghlian, A. ; Hashimoto, P. ; Janke, P. ; McCray, L. ; Jeong Moon
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
GaN HFET has emerged as a very promising device technology for next-generation microwave applications. The last several years have witnessed a tremendous progress in the development of this technology, from material growth to circuit demonstration. Devices and circuits with excellent output power, power density, efficiency, and noise figure have been achieved. This talk reviews the current status of GaN HFET technology.
Keywords :
III-V semiconductors; gallium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power field effect transistors; wide band gap semiconductors; GaN; GaN HFET; RF technology; efficiency; microwave technology; noise figure; output power; power density; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; Microwave FETs; Microwave devices; Microwave technology; Noise robustness; Radio frequency; Substrates;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906263
