Broad-band microwave power amplifiers in GaN technology

Author

Krishnamurthy, K. ; Keller, S. ; Mishra, U.K. ; Rodwell, M.J.W. ; Long, S.I.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2000

fDate

5-8 Nov. 2000

Firstpage

33

Lastpage

36

Abstract

We report lumped power amplifiers with >4.4 W saturated output power over 2-8 GHz bandwidth in a GaN HEMT technology. Peak output power and PAE are 5.12 W and 21% respectively at 6 GHz, under class-A operation. Also reported are GaAs MESFET/GaN HEMT cascode distributed amplifiers with 1-9 GHz bandwidth and with peak output power and PAE of 1.35 W and 14% respectively at 8 GHz.

Keywords

HEMT circuits; III-V semiconductors; distributed amplifiers; gallium compounds; microwave power amplifiers; wide band gap semiconductors; wideband amplifiers; 1 to 9 GHz; 1.35 W; 14 percent; 2 to 8 GHz; 21 percent; 4.4 W; 5.12 W; GaN; GaN HEMT technology; broadband microwave power amplifier; cascode distributed amplifier; class-A operation; lumped amplifier; output power; power added efficiency; Bandwidth; Distributed amplifiers; Gallium arsenide; Gallium nitride; HEMTs; MESFETs; Microwave amplifiers; Microwave technology; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 2000. 22nd Annual

Conference_Location

Seattle, WA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5968-2

Type

conf

DOI

10.1109/GAAS.2000.906267

Filename

906267