C-plus L-band EDFA with over 70 nm operating range

Author

Sinivasagam, V. ; Dimyati, K. ; Singh, R.D. ; Mustafa, A.

Author_Institution

Dept. of Electr. Eng., Malaya Univ., Kuala Lumpur, Malaysia

Volume

C

fYear

2004

fDate

21-24 Nov. 2004

Firstpage

78

Abstract

This paper presents a wideband silica-based EDFA design operating in both the C-band and the L-band region. The amplifier design is made of a dual stage, co-pumped at 980 nm which delivers an average output power of 10.4 dBm over the entire 3 dB bandwidth of 72 nm at 0 dBm input power representing 100 WDM channels at -20 dBm/ch. An average gain of noise figure (NF) of 5.6 dB was obtained for the entire operating bandwidth of 1528 nm to 1600 nm when pumped at 980 nm. Power conversion efficiency (PCE), high of 8.6% was obtained from this wideband EDFA design.

Keywords

erbium; optical communication equipment; optical fibre amplifiers; optical fibre networks; telecommunication channels; wavelength division multiplexing; 1528 to 1600 nm; 5.6 dB; C-plus L-band EDFA; WDM channels; amplifier design; noise figure; power conversion efficiency; wideband silica-based EDFA design; Bandwidth; Broadband amplifiers; Erbium-doped fiber amplifier; L-band; Noise figure; Noise measurement; Power amplifiers; Power generation; Wavelength division multiplexing; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2004. 2004 IEEE Region 10 Conference

Print_ISBN

0-7803-8560-8

Type

conf

DOI

10.1109/TENCON.2004.1414711

Filename

1414711