A novel approach to thermal tests for flash memories reliability improvement based on DoE method

Author

Bacis, G. ; Catelani, M. ; Ciani, L. ; Scarano, V. ; Singuaroli, R.

Author_Institution

ST Microelectron., Agrate Brianza

fYear

2007

fDate

1-3 May 2007

Firstpage

1

Lastpage

4

Abstract

The different steps of an assembly process of NAND flash memories could cause thermal or mechanical stresses that induce faults in their programming. We analyzed the probably faults and to solve the problems found we indicated the interesting parameters and implemented a DoE (design of experiments) as an instrument to plan the laboratory tests. The flash memories under test are Pb-free and our trials shown an improvement when a new conductive silver glue is used in the assembly process.

Keywords

NAND circuits; design of experiments; flash memories; integrated circuit reliability; integrated circuit testing; thermal stresses; DoE method; NAND flash memories; design of experiments; mechanical stress; reliability improvement; thermal stress; thermal tests; Assembly; Electronic equipment testing; Electronic packaging thermal management; Flash memory; Instrumentation and measurement; Laboratories; Microelectronics; Production; Silver; Thermal stresses; BGA package; Pb free solder; design of experiments; flash memory; reliability tests; silver filled; thermal stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference Proceedings, 2007. IMTC 2007. IEEE

Conference_Location

Warsaw

ISSN

1091-5281

Print_ISBN

1-4244-0588-2

Type

conf

DOI

10.1109/IMTC.2007.379240

Filename

4258257