RF characteristics of GaAs/InGaAsN/GaAs P-n-P double heterojunction bipolar transistors

Author

Baca, A.G. ; Chang, P.C. ; Li, N.Y. ; Hon, H.Q. ; Monier, C. ; Laroche, J. ; Ren, F. ; Pearton, S.J.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2000

fDate

5-8 Nov. 2000

Firstpage

63

Lastpage

66

Abstract

We have demonstrated a P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V/sub ON/) that is 0.27 V lower than in a comparable P-n-P AlGaAs/GaAs HBT. The device shows near-deal DC characteristics with a current gain (/spl beta/) greater than 45. The high-speed performance of the device are comparable to a similar P-n-P AlGaAs/GaAs HBT, with f/sub T/ and f/sub MAX/ values are both approximately 12 GHz. This device may be suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; 12 GHz; DC characteristics; GaAs-InGaAs-GaAs; GaAs/InGaAsN/GaAs P-n-P double heterojunction bipolar transistor; RF characteristics; current gain; high-speed low-power device; turn-on voltage; Batteries; Bipolar transistors; Double heterojunction bipolar transistors; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Lattices; Low voltage; Photonic band gap; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 2000. 22nd Annual

Conference_Location

Seattle, WA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5968-2

Type

conf

DOI

10.1109/GAAS.2000.906291

Filename

906291