• DocumentCode
    2911754
  • Title

    A 49.2 GHz HEMT static frequency divider using an analog/microwave design approach

  • Author

    Raghavan, G. ; Case, M.G. ; Matloubian, M. ; Pobanz, C.W. ; Micovic, M. ; Hu, M. ; Ngo, C. ; Janke, P. ; McCalla, K.

  • Author_Institution
    LLC, HRL Labs., Malibu, CA, USA
  • fYear
    2000
  • fDate
    5-8 Nov. 2000
  • Firstpage
    85
  • Lastpage
    87
  • Abstract
    Although current gain cutoff frequencies (f/sub T/) of both HEMT and HBTs are comparable and f/sub MAX/ for HEMTs is considerably higher, the highest speed static dividers have been reported in InP-based HBT technology. Higher transconductance of HBTs at smaller sizes compared to HEMTs results in compact circuits and lower interconnect load. Careful management of this interconnect load through an innovative microwave/analog design approach has resulted in a static divide-by-two circuit in InP HEMT technology operating at 49.2 GHz. To our knowledge this is the highest frequency of operation for a fully static divider in HEMT technology - even exceeding results obtained on faster devices with smaller gate lengths.
  • Keywords
    HEMT circuits; III-V semiconductors; frequency dividers; indium compounds; microwave field effect transistors; 49.2 GHz; InP; InP HEMT technology; analog design; interconnect load; microwave design; static frequency divider; transconductance; Cutoff frequency; Frequency conversion; HEMTs; Heterojunction bipolar transistors; Innovation management; Integrated circuit interconnections; Load management; Microwave devices; Technology management; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    GaAs IC Symposium, 2000. 22nd Annual
  • Conference_Location
    Seattle, WA, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-5968-2
  • Type

    conf

  • DOI
    10.1109/GAAS.2000.906298
  • Filename
    906298