DocumentCode
2911754
Title
A 49.2 GHz HEMT static frequency divider using an analog/microwave design approach
Author
Raghavan, G. ; Case, M.G. ; Matloubian, M. ; Pobanz, C.W. ; Micovic, M. ; Hu, M. ; Ngo, C. ; Janke, P. ; McCalla, K.
Author_Institution
LLC, HRL Labs., Malibu, CA, USA
fYear
2000
fDate
5-8 Nov. 2000
Firstpage
85
Lastpage
87
Abstract
Although current gain cutoff frequencies (f/sub T/) of both HEMT and HBTs are comparable and f/sub MAX/ for HEMTs is considerably higher, the highest speed static dividers have been reported in InP-based HBT technology. Higher transconductance of HBTs at smaller sizes compared to HEMTs results in compact circuits and lower interconnect load. Careful management of this interconnect load through an innovative microwave/analog design approach has resulted in a static divide-by-two circuit in InP HEMT technology operating at 49.2 GHz. To our knowledge this is the highest frequency of operation for a fully static divider in HEMT technology - even exceeding results obtained on faster devices with smaller gate lengths.
Keywords
HEMT circuits; III-V semiconductors; frequency dividers; indium compounds; microwave field effect transistors; 49.2 GHz; InP; InP HEMT technology; analog design; interconnect load; microwave design; static frequency divider; transconductance; Cutoff frequency; Frequency conversion; HEMTs; Heterojunction bipolar transistors; Innovation management; Integrated circuit interconnections; Load management; Microwave devices; Technology management; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location
Seattle, WA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5968-2
Type
conf
DOI
10.1109/GAAS.2000.906298
Filename
906298
Link To Document