DocumentCode
2911887
Title
Industrial application of heterostructure device simulation
Author
Palankovski, V. ; Quay, R. ; Selberherr, S.
Author_Institution
Inst. of Miroelectron., Tech. Univ. Wien, Austria
fYear
2000
fDate
5-8 Nov. 2000
Firstpage
117
Lastpage
120
Abstract
We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. Results for heterostructure bipolar transistors (HBTs) and for high electron mobility transistors (HEMTs) are presented in good agreement with measured data of industrially relevant devices.
Keywords
III-V semiconductors; heterojunction bipolar transistors; high electron mobility transistors; semiconductor device models; III-V compound semiconductor; heterostructure RF device simulation; heterostructure bipolar transistor; high electron mobility transistor; industrial application; Circuit simulation; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium gallium arsenide; MMICs; MODFETs; Medical simulation; Process control; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location
Seattle, WA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5968-2
Type
conf
DOI
10.1109/GAAS.2000.906305
Filename
906305
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