Title :
Forecasting method for HEMT MMIC large-signal RF yield
Author :
Tsai, R. ; Chen, Y.C. ; Nishimoto, M. ; Yang, L.W. ; Okamura, W. ; Lai, R.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
Accurate MMIC (Monolithic Microwave Integrated Circuits) RF yield forecasting is a critical tool for proactively defusing yield problems and planning efficient use of manufacturing resources. TRW has investigated a method for forecasting the large-signal RF yield of HEMT MMICs that is based on a combination of statistical device modeling through an analytical, physical device model, and an empirical nonlinear device model. Using this hybrid nonlinear statistical device modeling method, we have been able to accurately simulate the variation of large-signal MMIC performance with manufacturing process variation.
Keywords :
HEMT integrated circuits; MMIC; integrated circuit modelling; integrated circuit yield; HEMT MMIC; hybrid nonlinear statistical device model; large-signal RF yield; manufacturing process; Analytical models; HEMTs; Integrated circuit yield; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Predictive models; Radio frequency; Radiofrequency integrated circuits;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906307
