Title :
Broadband low actuation voltage RF MEM switches
Author :
Shyf-Chiang Shen ; Caruth, D. ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ. at Urbana, Champaign, IL, USA
Abstract :
We demonstrate a sub-10 volts RF MEM switch built on a semi-insulating GaAs substrate. The fabrication process is a 7-mask-layer process compatible with GaAs MMIC processes. The insertion loss is less than 0.1 dB and the isolation is better than 25 dB over frequencies up to 40 GHz. The MEM switches will provide a solution as a broadband, low voltage building block for RF communication applications.
Keywords :
III-V semiconductors; gallium arsenide; low-power electronics; micromechanical devices; microwave switches; semiconductor switches; 0.1 dB; 10 V; 40 GHz; GaAs; GaAs semi-insulating substrate; RF communication; broadband low voltage RF MEM switch; fabrication; insertion loss; isolation; Communication switching; Electrodes; Fabrication; Gallium arsenide; Insertion loss; Low voltage; Phase shifters; Phased arrays; Radio frequency; Switches;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906314
