DocumentCode
2912037
Title
Broadband low actuation voltage RF MEM switches
Author
Shyf-Chiang Shen ; Caruth, D. ; Feng, M.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ. at Urbana, Champaign, IL, USA
fYear
2000
fDate
5-8 Nov. 2000
Firstpage
161
Lastpage
164
Abstract
We demonstrate a sub-10 volts RF MEM switch built on a semi-insulating GaAs substrate. The fabrication process is a 7-mask-layer process compatible with GaAs MMIC processes. The insertion loss is less than 0.1 dB and the isolation is better than 25 dB over frequencies up to 40 GHz. The MEM switches will provide a solution as a broadband, low voltage building block for RF communication applications.
Keywords
III-V semiconductors; gallium arsenide; low-power electronics; micromechanical devices; microwave switches; semiconductor switches; 0.1 dB; 10 V; 40 GHz; GaAs; GaAs semi-insulating substrate; RF communication; broadband low voltage RF MEM switch; fabrication; insertion loss; isolation; Communication switching; Electrodes; Fabrication; Gallium arsenide; Insertion loss; Low voltage; Phase shifters; Phased arrays; Radio frequency; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location
Seattle, WA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5968-2
Type
conf
DOI
10.1109/GAAS.2000.906314
Filename
906314
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