Title :
A 60 GHz integrated sub-harmonic receiver MMIC
Author :
Zelley, C.A. ; Barnes, A.R. ; Bannister, D.C. ; Ashcroft, R.W.
Author_Institution :
DERA, Malvern, UK
Abstract :
We present a 60 GHz integrated sub-harmonic receiver fabricated using the TRW 0.15 /spl mu/m gate length GaAs pHEMT foundry process. The receiver MMIC consists of a four stage LNA, a sub-harmonic diode mixer and a single stage LO buffer amplifier. The chip size is 5.8 mm/spl times/2.2 mm. The receiver MMIC has been integrated into a coaxial package for system evaluation. The packaged receiver module has a measured conversion gain of /spl ges/8 dB across the 58 GHz to 67 GHz frequency band and a typical noise figure of 5.8 dB. The use of a sub-harmonic mixer allows LO operation over the 21 to 27 GHz frequency range at a low LO drive level of -5 dBm and eliminates the need for high cost mm-wave sources. This is believed to be the first single chip V-band receiver manufactured using a commercially available, high yield, production foundry process. This paper describes the design, packaging and measured performance of the integrated sub-harmonic receiver MMIC.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; gallium arsenide; millimetre wave receivers; 0.15 micron; 5.8 dB; 60 GHz; 8 dB; GaAs; GaAs PHEMT MMIC; LNA; LO buffer amplifier; MM-wave communication; TRW foundry process; V-band; coaxial package; conversion gain; diode mixer; integrated sub-harmonic receiver; noise figure; single chip; Coaxial components; Diodes; Foundries; Frequency measurement; Gallium arsenide; MMICs; Mixers; PHEMTs; Packaging; Semiconductor device measurement;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906317