Title :
Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells
Author :
Ching-Hsiang Hsu ; Chang, Edward Yi ; Hsun-Jui Chang ; Hung-Wei Yu ; Hong Quan Nguyen ; Chen-Chen Chung ; Jer-Shen Maa ; Pande, Krishna
Author_Institution :
Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Copper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4 × 10-6 and 6.9 × 10-6 Ωcm2, respectively. Utilizing such metallization structure for InGaP/InGaAs/Ge triple-junction device structure solar cells were fabricated that delivered conversion efficiency of 23.11%, which is average efficiency for the above device structure.
Keywords :
III-V semiconductors; annealing; contact resistance; copper; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; interconnections; ohmic contacts; p-n junctions; palladium; platinum; semiconductor device metallisation; solar cells; titanium; Cu-Pd-InGaP-InGaAs-Ge; Cu-Pt-Ti-Pt-InGaP-InGaAs-Ge; conversion efficiency; copper contact; gold-free fully metallized triple-junction solar cell device fabrication; interconnect low-cost solar cell application; metallization structure; ohmic contact resistance; thermal annealing; Annealing; Gallium arsenide; III-IV semiconductor materials; Indium gallium arsenide; Ohmic contacts; Photovoltaic cells; III-V concentrator solar cell; copper metallization; low cost; low cost.; ohmic contact;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2361923
