Title :
A 10-Gb/s AlGaAs/InGaAs p-HEMT distributed EA driver with a D-flip-flop for optical fiber links
Author :
Miyashita, M. ; Yamamoto, K. ; Andoh, K. ; Okada, N. ; Motoshima, K. ; Takemoto, A.
Author_Institution :
Div. of High Frequency & Opt. Semicond., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
A 10-Gb/s distributed driver (DD) IC containing a D-FF (flip-flop) function has been developed for EA (electroabsorption) modulators in optical fiber links. Despite the utilization of production-level 0.2-/spl mu/m AlGaAs/InGaAs pseudomorphic HEMTs and conventional MMIC fabrication processes, the fabricated driver IC shows good measured characteristics with an output voltage of 2.9 V/sub p-p/, a rise/fall time (tr/tf) of 22/21 ps, and a power consumption of 2.9 W at 10 Gb/s using a -5.2-V power supply. The experimental results are the first to reveal that the tr/tf is about 50% faster than those of the lumped element type driver (LE-D), which was also designed and fabricated in this study to compare with the DD´s characteristics. The output return loss of the DD is also vastly improved when compared to that of the LE-D.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; driver circuits; electro-optical modulation; electroabsorption; field effect MMIC; flip-flops; gallium arsenide; indium compounds; low-power electronics; optical communication equipment; optical fibre communication; -5.2 V; 0.2 micron; 10 Gbit/s; 2.9 W; AlGaAs-InGaAs; AlGaAs/InGaAs PHEMT; D-flip-flop; MMIC process; distributed driver IC; electroabsorption modulator; optical fiber link; Flip-flops; Indium gallium arsenide; MMICs; Optical device fabrication; Optical fibers; Optical modulation; PHEMTs; Photonic integrated circuits; Power measurement; Time measurement;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906324
