Title :
Compact, 1 Watt, power amplifier MMICs for K-band applications
Author :
Brown, S.A. ; Carroll, J.M.
Author_Institution :
TriQuint Semicond. Texas, Richardson, TX, USA
Abstract :
Two compact, 1 Watt power amplifier MMICs for K-band applications have been developed using TriQuint standard 0.25 /spl mu/m gate length pHEMT technology. Extensive use of EM simulation combined with the selection of compact, lumped element circuit topologies allow these designs to achieve P/sub sat/>30.0 dBm.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; 0.25 micron; 1 W; K-band; MMIC power amplifier; PHEMT technology; TriQuint; compact lumped element circuit topology; electromagnetic simulation; Bonding; Capacitors; FETs; Frequency; Gallium arsenide; K-band; MMICs; Power amplifiers; Power measurement; Stability;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906327
