1-Watt Ka-band coplanar high power MMIC amplifiers using 0.15-/spl mu/m GaAs PHEMTs

Author

Bessemoulin, A. ; Massler, H. ; Hulsmann, A. ; Schlechtweg, M.

Author_Institution

Fraunhofer-Inst. for Appl. Solid-State Phys. (IAF), Freiburg, Germany

fYear

2000

fDate

5-8 Nov. 2000

Firstpage

227

Lastpage

230

Abstract

Two compact coplanar MMIC amplifiers having high output power at Ka-band are presented. Based on our 0.15-/spl mu/m GaAs PHEMT process on 4" wafers, a two-stage MMIC driver amplifier has demonstrated at 35 GHz, a linear gain of 11 dB, an output power at 1 dB gain compression P/sub -1dB/ of 350 mW, and a saturated output power P/sub sat/ greater than 500 mW. At the same frequency, the coplanar high power amplifier achieved a linear gain of 9.5 dB, with P/sub -1dB/=725 mW and more than 1 Watt of saturated output power. To our knowledge, this is the highest output power ever reported at Ka-band for any coplanar MMICs.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; coplanar waveguide components; driver circuits; gallium arsenide; 0.15 micron; 1 W; 11 dB; 35 GHz; 4 in; 9.5 dB; GaAs; GaAs PHEMT; Ka-band; coplanar MMIC power amplifier; driver amplifier; gain compression; linear gain; output power; saturated output power; Coplanar waveguides; Driver circuits; Gain; Gallium arsenide; High power amplifiers; MMICs; Microstrip; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

GaAs IC Symposium, 2000. 22nd Annual

Conference_Location

Seattle, WA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5968-2

Type

conf

DOI

10.1109/GAAS.2000.906328

Filename

906328