DocumentCode
2912311
Title
200 GHz InP/GaAs/sub x/Sb/sub 1-x//InP double heterojunction bipolar transistors
Author
Bolognesi, C.R. ; Dvorak, M.W. ; Pitts, O. ; Watkins, S.P.
Author_Institution
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
fYear
2000
fDate
5-8 Nov. 2000
Firstpage
233
Lastpage
236
Abstract
We report the fabrication and characterization of abrupt junction InP/GaAsSb/InP DHBTs with a current gain cutoff frequency f/sub T/ and a maximum oscillation frequency f/sub MAX/ above 200 GHz with a breakdown voltage BV/sub CEO/>6 V. This level of performance was reached by thinning the base layer to 200 /spl Aring/ and increasing the C-doping level to /spl sim/10/sup 20//cm/sup 3/ while using a 2000 /spl Aring/ thick InP collector layer.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; 200 GHz; 6 V; InP-GaAsSb-InP; InP/GaAs/sub x/Sb/sub 1-x//InP double heterojunction bipolar transistor; abrupt junction; breakdown voltage; current gain cutoff frequency; maximum oscillation frequency; microwave characteristics; Cutoff frequency; Delay; Doping; Double heterojunction bipolar transistors; Electron mobility; Fabrication; Gallium arsenide; Indium phosphide; Performance gain; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location
Seattle, WA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5968-2
Type
conf
DOI
10.1109/GAAS.2000.906329
Filename
906329
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