Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli, Taiwan
Abstract :
A low power and low noise figure (NF) 60 GHz low-noise amplifier (LNA) with excellent phase linearity using standard 90 nm CMOS technology is reported. The LNA comprises a common-source (CS) stage followed by a cascode stage and a CS stage. The LNA consumes 14.1 mW, achieving S11 better than - 10 dB for the frequencies 55.1-59.5 GHz, S22 better than - 10 dB for the frequencies 55.1-59.4 GHz, and group delay variation smaller than - 13.25 ps for the frequencies 50.4-63 GHz. Additionally, high and flat S21 of 9.9 ± 1.5 dB is achieved for the frequencies 50.4±62.9 GHz, which means the corresponding 3 dB bandwidth is 12.5 GHz. Furthermore, the LNA achieves a minimum NF of 3.88 dB at 55.5 GHz and an NF of 4.73 ± 0.85 dB for the frequencies 50±63.5 GHz, one of the best NF results ever reported for a 60 GHz CMOS LNA.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; microwave amplifiers; microwave integrated circuits; millimetre wave amplifiers; millimetre wave integrated circuits; ultra wideband technology; CMOS UWB LNA; CS stage; bandwidth 12.5 GHz; cascode stage; common-source stage; frequency 50 GHz to 63.5 GHz; gain 3 dB; low-noise amplifier; noise figure 3.88 dB; phase linearity; power 14.1 mW; size 90 nm; small group-delay-variation; standard CMOS technology;