Title :
Low DC power, high gain-bandwidth product, coplanar Darlington feedback amplifiers using InAlAs/InGaAs heterojunction bipolar transistors
Author :
Delong Cui ; Sawdai, D. ; Shawn Hsu ; Pavlidis, Dimitris
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Broad band amplifiers with two Darlington feedback topologies, namely resistive biased and mirror biased, have been designed, fabricated and characterized. The HBT layers used for amplifiers were grown by MBE. To reduce the knee voltage and increase the breakdown voltage of the devices, graded base-emitter junction and low-doped, thick collector have been employed. The fabricated amplifiers have achieved 10.95 dB gain with 25.5 GHz bandwidth at DC power consumption of only 34.7 mW. State-of-art Gain-Bandwidth-Products per dc power were achieved for both amplifiers (/spl ges/2.60 GHz/mW). The fabricated amplifiers also demonstrated moderate output power (8.3 dBm) at 10 GHz with a low DC power consumption of only 40 mW.
Keywords :
III-V semiconductors; aluminium compounds; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; wideband amplifiers; 10 GHz; 10.95 dB; 25.5 GHz; 34.7 mW; DC power consumption; InAlAs-InGaAs; InAlAs/InGaAs heterojunction bipolar transistor; MBE growth; breakdown voltage; broadband amplifier; coplanar Darlington feedback amplifier; gain-bandwidth product; graded base-emitter junction; knee voltage; low-doped collector; mirror biased topology; output power; resistive biased topology; Bandwidth; Breakdown voltage; Energy consumption; Feedback; Gain; Heterojunction bipolar transistors; Knee; Mirrors; Power amplifiers; Topology;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906335
