Surface modification of silicon wafer by low-pressure high-frequency plasma chemical vapor deposition method

Author

Kataoka, H. ; Mungkung, N. ; Yuji, T. ; Kawano, M. ; Kiyota, Y. ; Uesugi, D. ; Nakabayashi, K. ; Suzaki, Y. ; Shibata, H. ; Kashihara, N. ; Sakai, K. ; Bouno, T. ; Akatsuka, H.

Author_Institution

Dept. of Int. Liberal Arts, Minami Kyushu Junior Coll., Miyazaki, Japan

fYear

2010

fDate

Aug. 30 2010-Sept. 3 2010

Firstpage

505

Lastpage

508

Abstract

The writers are developing the production process device of thin-film material for the flexible solar cells using the high-frequency plasma chemical vapor deposition (CVD) method. In order to clarify the characteristics of the device, plasma treatment is applied on the Si wafer surface and basic characteristic of plasma is found by the analysis of the B doped p-type (100) Si wafer surface using X-ray photoelectron spectroscopy (XPS) and contact angle measuring gauge.

Keywords

plasma CVD coatings; semiconductor device manufacture; silicon compounds; solar cells; thin film devices; B doped p-type Si wafer surface; X-ray photoelectron spectroscopy; contact angle measuring gauge; low-pressure high-frequency plasma chemical vapor deposition method; plasma treatment; production process device; silicon wafer; solar cells; surface modification; thin-film material; Electrodes; Films; Photovoltaic cells; Plasmas; Silicon; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Discharges and Electrical Insulation in Vacuum (ISDEIV), 2010 24th International Symposium on

Conference_Location

Braunschweig

ISSN

1093-2941

Print_ISBN

978-1-4244-8367-9

Electronic_ISBN

1093-2941

Type

conf

DOI

10.1109/DEIV.2010.5625758

Filename

5625758