Properties of ZnO:Al thin films for solar cells by pyrosol method

Author

Song, Jinsoo ; Cho, Woo-Yeong ; Lim, Koeng-Su ; Yoon, Kyung-Hoon ; Yu, Gwon-Jong

Author_Institution

Korea Inst. of Energy Res., Taejon, South Korea

Volume

1

fYear

1994

fDate

5-9 Dec 1994

Firstpage

630

Abstract

Undoped and aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared on heated Coming 7059 glass substrates by pyrosol method under various deposition conditions. The effects of the different deposition variables and annealing in vacuum of ZnO thin films have been investigated by analyzing the electrical, optical, and compositional changes of the films. The results indicate that it is possible to obtain ZnO:Al thin films with a transmittance at about 80% and a resistivity as low as 3.5×10^-3 Ωcm. Furthermore, it was also found that the films are stable in hydrogen plasma (within the exposure time of 10 minutes)

Keywords

II-VI semiconductors; aluminium; annealing; pyrolysis; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; solar cells; spray coating techniques; spray coatings; zinc compounds; 10 min; 3.5E-3 ohmcm; ZnO; ZnO:Al; annealing; compositional properties; deposition conditions; electrical properties; hydrogen plasma; optical properties; pyrosol deposition method; solar cell; spray pyrolysis; thin film semiconductor; transmittance; Annealing; Conductivity; Glass; Hydrogen; Optical films; Photovoltaic cells; Plasma stability; Sputtering; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520040

Filename

520040