Local stress measurements in packaging by Raman spectroscopy

Author

Chen, Jian ; Chan, Moses ; De Wolf, Ingrid

Author_Institution

IMEC, Leuven, Belgium

fYear

2000

fDate

2000

Firstpage

159

Lastpage

162

Abstract

This paper discusses the application of micro-Raman spectroscopy to measure mechanical stress in microelectronic packages. Examples are given for local stress induced in the silicon chip by solder bumps, stress induced in the chip by bonding to a Cu substrate, and stress induced during thinning of wafers by polishing. Both 1D and 2D results from stress measurements are shown. It is demonstrated that micro-Raman spectroscopy is a very useful tool for the study of packaging induced local mechanical stress and offers a means for verification of finite element simulation results

Keywords

Raman spectra; assembling; finite element analysis; integrated circuit bonding; integrated circuit interconnections; integrated circuit modelling; integrated circuit packaging; internal stresses; polishing; soldering; stress analysis; stress measurement; Cu; Cu substrate bonding; Raman spectroscopy; Si; finite element simulation; finite element simulation verification; local stress measurements; mechanical stress; micro-Raman spectroscopy; microelectronic packages; packaging; packaging induced local mechanical stress; polishing; process-induced local stress; silicon chip; solder bumps; stress measurements; wafer thinning; Finite element methods; Mechanical variables measurement; Microelectronics; Packaging; Raman scattering; Semiconductor device measurement; Silicon; Spectroscopy; Stress measurement; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference, 2000. (EPTC 2000). Proceedings of 3rd

Print_ISBN

0-7803-6644-1

Type

conf

DOI

10.1109/EPTC.2000.906366

Filename

906366