Title :
DBC substrates as a base for power MCM´s
Author :
Schulz-Harder, Jürgen
Author_Institution :
Curamik Electron. Gmbh, Eschenbach, Germany
Abstract :
Multichip modules (MCM) for high current applications are needed for applications such as power amplifiers, inverters and DC-DC converters. The use of traditional thin and thick film hybrid substrates for high current applications is limited due to thin metallization layers and relatively high electric resistance of the conductors. Using DBC (direct bond copper) technology, thick copper foils (0.125-0.7 mm) are clad to alumina or aluminum nitride. Cu patterning is done by technology similar to that for PCB processing. The thick Cu conductors provide excellent current carrying capability and heat spreading of attached power dice. The strong adhesion of the Cu-to-ceramic bond reduces the thermal expansion coefficient in the plane to values only slightly higher than those of the ceramic itself (7.2-7.6×10-6). This allows direct die attach of large dice without TEC control layers. As DBC technology uses Cu foils, integrated lead-offs can be realized. This technology was developed by Curamik(R) Electronics and is now in volume production. A new via technology combined with integrated leads allow the design of low weight hermetic packages with improved thermal performance. As the via resistance is <10-4 Ω, there is practically no current limitation in comparison to glass sealed feedthroughs of conventional hermetic metal packages. High end MCMs with extremely low thermal resistance (<0.03 K/W) can be achieved by integration of 3D micro channels for liquid cooling beneath the power circuit area. This is also a potential future solution for high speed microprocessor systems
Keywords :
adhesion; ceramic packaging; cooling; copper; electric resistance; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; invertors; microassembling; multichip modules; power amplifiers; thermal expansion; thermal management (packaging); thermal resistance; 0.125 to 0.7 mm; 0.3 mohm; 3D micro channel integration; Cu foils; Cu patterning; Cu-Al2O3; Cu-AlN; Cu-to-ceramic bond; DBC substrates; DBC technology; DC-DC converters; MCMs; PCB process technology; TEC control layers; adhesion; alumina base; aluminum nitride base; attached power dice; current carrying capability; direct bond copper technology; direct die attach; electric resistance; glass sealed feedthroughs; heat spreading; hermetic metal packages; hermetic package design; high current applications; high speed microprocessor systems; integrated lead-offs; integrated leads; inverters; liquid cooling; metallization layers; multichip modules; power MCM; power amplifiers; power circuit area; thermal expansion coefficient; thermal performance; thermal resistance; thick Cu conductors; thick copper foils; thick film hybrid substrates; thin film hybrid substrates; via resistance; via technology; volume production; Bonding; Copper; DC-DC power converters; Electronic packaging thermal management; High power amplifiers; Inverters; Multichip modules; Substrates; Thermal resistance; Thick films;
Conference_Titel :
Electronics Packaging Technology Conference, 2000. (EPTC 2000). Proceedings of 3rd
Print_ISBN :
0-7803-6644-1
DOI :
10.1109/EPTC.2000.906393