DocumentCode
2913831
Title
A universal method for calculating and extracting the LF and RF noise behavior of nonlinear devices
Author
Follmann, R. ; Berben, J. ; Kother, D. ; Waldow, P. ; Borkes, J. ; Wolff, I.
Author_Institution
Inst. fur Mobil, IMST, Lintfort, Germany
fYear
2000
fDate
5-8 Nov. 2000
Firstpage
47
Lastpage
51
Abstract
In this paper an efficient method for calculating the noise behavior of active devices is described. This method offers a general solution for a large variety of transistor and other devices. The method can easily be implemented in any extraction and simulation software and allows determination of LF as well as RF noise behavior. The functionality is demonstrated on a nonlinear FET model. Furthermore, verifications with HP series IV/ADS are given for different devices.
Keywords
field effect transistors; semiconductor device models; semiconductor device noise; HP series IV/ADS; LF noise; RF noise; active device; computer simulation; nonlinear FET model; parameter extraction; transistor; Active noise reduction; Circuit noise; Circuit simulation; Equations; Equivalent circuits; FETs; Low-frequency noise; Noise measurement; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location
Seattle, WA, USA
ISSN
1064-7775
Print_ISBN
0-7803-5968-2
Type
conf
DOI
10.1109/GAAS.2000.906420
Filename
906420
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