Wafer-scale room-temperature bonding between silicon and ceramic wafers by means of argon-beam surface activation

Author

Takagi, H. ; Maeda, R. ; Suga, T.

Author_Institution

Dept. of Manuf. Syst., AIST.MITI, Tsukuba, Japan

fYear

2001

fDate

25-25 Jan. 2001

Firstpage

60

Lastpage

63

Abstract

A room-temperature wafer bonding method between dissimilar materials is developed. 4-inch Si wafers and 3 or 4-inch ceramic wafers are bonded in vacuum after surface sputter etching by Ar beam. Strong bonding equivalent to bulk material is achieved by room-temperature process. The method enables the bonding between dissimilar materials regardless the thermal expansion mismatch and crystal lattice mismatch. In addition, it also realizes very low damage bonding because it does not require any heating process and external load to force two specimens together.

Keywords

ceramics; elemental semiconductors; micromechanical devices; silicon; sputter etching; wafer bonding; 3 inch; 4 inch; Ar; MEMS technology; Si; argon beam surface activation; ceramic wafer; crystal lattice mismatch; room temperature wafer bonding; silicon wafer; sputter etching; thermal expansion mismatch; Argon; Bonding forces; Ceramics; Crystalline materials; Heating; Lattices; Silicon; Sputter etching; Thermal expansion; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on

Conference_Location

Interlaken, Switzerland

ISSN

1084-6999

Print_ISBN

0-7803-5998-4

Type

conf

DOI

10.1109/MEMSYS.2001.906478

Filename

906478