• DocumentCode
    2914258
  • Title

    Temperature coefficients of material properties for electrodeposited MEMS

  • Author

    Chu, L.L. ; Long Que ; Gianchandani, Y.B.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
  • fYear
    2001
  • fDate
    25-25 Jan. 2001
  • Firstpage
    68
  • Lastpage
    71
  • Abstract
    This paper presents the use of micromachined differential capacitive strain sensors to investigate mechanical properties of electroplated Ni deposited under two different conditions on Si and glass substrates. The thermal expansion coefficient (/spl alpha/), Young´s modulus, and residual strain were studied as a function of temperature. The measured a was 8-16 ppm/K over 23-150/spl deg/C; the residual strain changed from neutral to -880 microstrain over 23-100/spl deg/C in one case and +68.5 microstrain to -420 microstrain over 23-130/spl deg/C in another case; and the Young´s modulus ranged from 115-135 GPa at room temperature. The sensitivity of the device to structural non-idealities was evaluated by numerical modeling.
  • Keywords
    Young´s modulus; capacitive sensors; electroplated coatings; micromechanical devices; microsensors; nickel; strain sensors; thermal expansion; 23 to 150 C; Ni; Si substrate; Young modulus; electrodeposited MEMS material; electroplated Ni; glass substrate; mechanical properties; micromachined differential capacitive strain sensor; microstrain; numerical model; residual strain; temperature coefficient; thermal expansion coefficient; Capacitive sensors; Glass; Material properties; Mechanical factors; Mechanical sensors; Strain measurement; Temperature distribution; Temperature measurement; Temperature sensors; Thermal expansion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
  • Conference_Location
    Interlaken, Switzerland
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-5998-4
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2001.906480
  • Filename
    906480