• DocumentCode
    2914429
  • Title

    Fabrication of piezoelectric acoustic transducers built on cantilever-like diaphragm

  • Author

    Cheol-Hyun Dan ; Eun Sok Kim

  • Author_Institution
    Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
  • fYear
    2001
  • fDate
    25-25 Jan. 2001
  • Firstpage
    110
  • Lastpage
    113
  • Abstract
    The paper presents a technique to fabricate a cantilever-like diaphragm that releases the residual stress (and also is mechanically flexible) much like a cantilever, and yet is itself a diaphragm with its four edges clamped. Using the high mechanical flexibility (i.e., extremely low Young´s Modulus) of parylene as a holding layer, we have successfully fabricated various piezoelectric acoustic transducers built on silicon nitride layer (either in cantilever form and/or freely-suspended island form) with electrodes and piezoelectric ZnO film. Since parylene has relatively low melting point (around 280/spl deg/C for parylene C), we deposit the parylene holding layer toward the end of the fabrication process after processing all the high temperature steps. Then after releasing the diaphragm with KOH etching, the silicon nitride is patterned from the backside with a reactive ion etcher (RIE). To demonstrate the effectiveness of a parylene-held cantilever-like diaphragm in releasing the residual stress, the devices before and after patterning the silicon nitride are compared. The acoustic outputs of the fabricated transducers have been measured with B&K 4135 microphone.
  • Keywords
    acoustic transducers; diaphragms; internal stresses; micromechanical devices; piezoelectric transducers; zinc compounds; KOH etching; MEMS device; SiN; Young modulus; ZnO; ZnO film; cantilever-like diaphragm; fabrication; mechanical flexibility; parylene holding layer; piezoelectric acoustic transducer; reactive ion etching; residual stress; silicon nitride layer; Acoustic transducers; Electrodes; Etching; Fabrication; Piezoelectric films; Residual stresses; Semiconductor films; Silicon; Temperature; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
  • Conference_Location
    Interlaken, Switzerland
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-5998-4
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2001.906491
  • Filename
    906491