DocumentCode :
2914643
Title :
An ultra-sensitive, high-vacuum absolute capacitive pressure sensor
Author :
Yafan Zhang ; Massoud-Ansari, S. ; Guangqing Meng ; Woojin Kim ; Najafi, N.
Author_Institution :
Integrated Sensing Syst. Inc., Ypsilanti, MI, USA
fYear :
2001
fDate :
25-25 Jan. 2001
Firstpage :
166
Lastpage :
169
Abstract :
This paper reports the development of a family of ultrasensitive and ultra-high-vacuum absolute capacitive pressure sensors, fabricated using the dissolved wafer process technology (DWP). One type of the sensors offers the following characteristics: full range 0-0.5 Torr, sub-/spl mu/Torr resolution, five orders of magnitude pressure response, high stability, and the highest aspect ratio of diaphragm area to its thickness of any MEMS capacitive sensors ever reported worldwide. This novel pressure sensor is pushing the edge of the technology and is capable of operating within the pressure ranges previously monitored only by the "Cold Cathode" and "Hot Filament Ion" techniques.
Keywords :
capacitive sensors; diaphragms; microsensors; pressure sensors; vacuum measurement; 0 to 0.5 torr; MEMS technology; aspect ratio; diaphragm; dissolved wafer process; fabrication; ultra-sensitive ultra-high-vacuum absolute capacitive pressure sensor; Capacitive sensors; Chemical sensors; Fabrication; Glass; Micromachining; Micromechanical devices; Microstructure; Sensor phenomena and characterization; Silicon; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on
Conference_Location :
Interlaken, Switzerland
ISSN :
1084-6999
Print_ISBN :
0-7803-5998-4
Type :
conf
DOI :
10.1109/MEMSYS.2001.906506
Filename :
906506
Link To Document :
بازگشت