Bulk micromachined angular rate sensor based on the ´butterfly´-gyro structure

Author

Hedenstierna, N. ; Habibi, S. ; Nilsen, S.M. ; Kvisteroy, Terje ; Jensen, G.U.

Author_Institution

SensoNor asa, Horten, Norway

fYear

2001

fDate

25-25 Jan. 2001

Firstpage

178

Lastpage

181

Abstract

The principle of the butterfly-gyro was first demonstrated with a large anisotropically etched structure in bulk silicon. Now the same principle has been used to develop a much smaller structure (9.6 mm/sup 2/). The new sensor chip is ICP-etched in bulk silicon and anodically bonded to form a triple stack (glass/Si/glass) structure. Together with an ASIC the sensor typically shows a noise level of 0.3 /sup o///sub s/ over 50 Hz bandwidth and a zero-rate offset (ZRO) less than 50 /sup o///sub s/.

Keywords

angular velocity measurement; application specific integrated circuits; elemental semiconductors; gyroscopes; micromachining; microsensors; silicon; sputter etching; ASIC; ICP etching; Si; angular rate sensor; anisotropic etching; anodic bonding; bulk micromachining; butterfly-gyro; glass/Si/glass triple stack structure; noise level; silicon chip; zero-rate offset; Anisotropic magnetoresistance; Cybernetics; Electrodes; Etching; Force sensors; Frequency; Glass; Oscillators; Silicon; Vibration measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2001. MEMS 2001. The 14th IEEE International Conference on

Conference_Location

Interlaken, Switzerland

ISSN

1084-6999

Print_ISBN

0-7803-5998-4

Type

conf

DOI

10.1109/MEMSYS.2001.906509

Filename

906509