Title :
Raman Scattering in Silicon Implanted by High Dose of Krypton
Author :
Galjautdinov, M.F. ; Kurbatova, N.V. ; Moiseev, S.A. ; Shtyrkov, E.I.
Keywords :
Amorphous materials; Annealing; Frequency; Gas lasers; Laser theory; Lattices; Pump lasers; Raman scattering; Silicon; Spectroscopy;
Conference_Titel :
Lasers and Electro-optics Europe, 1996. CLEO/Europe., Conference on
Conference_Location :
Hamburg, Germany
Print_ISBN :
0-7803-3169-9
DOI :
10.1109/CLEOE.1996.562588
